Growth Kinetics and Characterization of Chromia Scales Formed on Ni–30Cr Alloy in Impure Argon at 700 °C
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چکیده
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Wet oxidation of GeSi at 700 “C
About 500-nm-thick films of Ge,-,,6Sic64 and Ge o.28Si0.72 grown epitaxially on ( 100)Si have been oxidized at 700 “C in wet ambient. A uniform Ge,Sit -,O, oxide layer forms with a smooth interface between it and the unoxidized Ge$i, _ X layer below. The composition and structure of that layer remains unchanged as monitored by backscattering spectrometry or cross-sectional transmission electron...
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ژورنال
عنوان ژورنال: Oxidation of Metals
سال: 2020
ISSN: 0030-770X,1573-4889
DOI: 10.1007/s11085-020-09958-7